Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111)-Reference-Cited by-同舟云学术

Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111)

Published:2015-01-12 Issue:2 Volume:106 Page:023105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Soto Rodriguez Paul E. D.¹,Aseev Pavel¹,Gómez Victor J.¹,Kumar Praveen¹,Ul Hassan Alvi Naveed¹,Calleja Enrique¹,Mánuel José M.²,Morales Francisco M.²³,Jiménez Juan J.²,García Rafael²,Senichev Alexander⁴,Lienau Christoph⁵,Nötzel Richard⁶

Affiliation:

1. Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM), Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid, Spain

2. Dep. Ciencia de los Materiales e IM y QI., F. Ciencias, Universidad de Cádiz, 11510-Puerto Real, Cádiz, Spain

3. IMEYMAT: Institute of Research on Electron Microscopy and Materials of the University of Cádiz, Cádiz, Spain

4. Max Planck Institute of Microstructure Physics, Weinberg 2, Halle 06120, Germany

5. Institut für Physik, Carl von Ossietzky Universität Oldenburg, 26129 Oldenburg, Germany

6. L-NESS and Dipartimento di Scienza dei Materiali, Universitá di Milano-Bicocca, Via Cozzi 53, 20125 Milano, Italy

Funder

European Union project CRONOS

Deutsche Forschungsgemeinschaft (DFG)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4905662

Reference23 articles.

1. When group-III nitrides go infrared: New properties and perspectives

2. Blue-light emission from GaN self-assembled quantum dots due to giant piezoelectric effect

3. Green Gap Spectral Range Light-Emitting Diodes with Self-Assembled InGaN Quantum Dots Formed by Enhanced Phase Separation

4. Self-assembled m -plane InGaN quantum dots: formation and shape evolution

5. Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence

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