Temperature dependence of intensity and peak position from photocurrent response in p-CdIn2Te4 crystal
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1758311
Reference15 articles.
1. Devices using ternary or multinary compounds
2. The electronic characteristics of n‐type CdIn2Te4
3. Current transport inp‐type CdIn2Te4Schottky diodes
4. Infrared and Raman spectra of CdIn2Te4
5. Point defects in p-type CdIn2Te4 Bridgman grown crystals
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2. Structural, electronic, elastic and lattice dynamical properties of CdIn2Te4 under pressure from first principle;International Journal of Modern Physics B;2018-01-22
3. Effect of boron implantation on the electrical and photoelectrical properties of e-beam deposited Ag–In–Se thin films;Journal of Physics D: Applied Physics;2008-05-08
4. Ellipsometric and thermoreflectance spectroscopy of the defect-chalcopyrite semiconductorCdIn2Te4;Physical Review B;2007-07-13
5. Optical properties and electronic energy-band structure of CdIn2Te4;Journal of Materials Science: Materials in Electronics;2007-04-19
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