Point defects in p-type CdIn2Te4 Bridgman grown crystals-Reference-Cited by-同舟云学术

Point defects in p-type CdIn2Te4 Bridgman grown crystals

Published:2003-08 Issue:1-2 Volume:256 Page:116-122
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

You S.H,Hong K.J,Jeong T.S,Youn C.J,Park J.S,Shin D.C,Moon J.D

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference12 articles.

1. O. Madelung (Ed.), Landolt-Börnstein: Numerical Data and Functional Relationships in Science and Technology, Vol. 17h, Springer, Berlin, 1985, p. 124.

2. Devices using ternary or multinary compounds

3. The electronic characteristics of n‐type CdIn2Te4

4. Current transport inp‐type CdIn2Te4Schottky diodes

5. Infrared and Raman spectra of CdIn2Te4

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