Magnetic tunnel junctions for magnetic field sensor by using CoFeB sensing layer capped with MgO film-Reference-Cited by-同舟云学术

Magnetic tunnel junctions for magnetic field sensor by using CoFeB sensing layer capped with MgO film

Published:2014-05-07 Issue:17 Volume:115 Page:17E524
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Takenaga Takashi,Tsuzaki Yosuke,Yoshida Chikako,Yamazaki Yuichi,Hatada Akiyoshi,Nakabayashi Masaaki,Iba Yoshihisa,Takahashi Atsushi,Noshiro Hideyuki,Tsunoda Koji,Aoki Masaki,Furukawa Taisuke,Fukumoto Hiroshi,Sugii Toshihiro

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4868181

Reference10 articles.

1. Nanoscale magnetic tunnel junction sensors with perpendicular anisotropy sensing layer

2. Magnetic Tunnel Junctions Based on Out-of-Plane Anisotropy Free and In-Plane Pinned Layer Structures for Magnetic Field Sensors

3. MgO Based Magnetic Tunnel Junctions With Co$_{20}$Fe$_{60}$B$_{20}$ Sensing Layer for Magnetic Field Sensors

4. A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction

5. Enhancement of perpendicular magnetic anisotropy in FeB free layers using a thin MgO cap layer

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