Study on the effect of re-deposition induced by ion beam etching on MTJ performances
Author:
Affiliation:
1. College of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan 410073, China
2. College of Aerospace Science and Engineering, National University of Defense Technology, Changsha, Hunan 410073, China
Funder
China Postdoctoral Science Foundation
State Key Laboratory of Low-Dimensional Quantum Physics
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5117312
Reference22 articles.
1. Spintronics: A Spin-Based Electronics Vision for the Future
2. Spintronics technology and device development
3. Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
4. Electric Field Manipulation of Magnetization Rotation and Tunneling Magnetoresistance of Magnetic Tunnel Junctions at Room Temperature
5. Spin-dependent resonant tunneling and magnetoresistance in Ni/graphene/h-BN/graphene/Ni van der Waals heterostructures
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