GaN quantum dot density control by rf-plasma molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1645333
Reference9 articles.
1. Self‐assembling GaN quantum dots on AlxGa1−xN surfaces using a surfactant
2. Stranski–Krastanow growth of GaN quantum dots by metalorganic chemical vapor deposition
3. GaN islanding by spontaneous rearrangement of a strained two-dimensional layer on (0001) AlN
4. Stranski-Krastanov growth mode during the molecular beam epitaxy of highly strained GaN
5. Surfactant effect of gallium during molecular-beam epitaxy of GaN on AlN (0001)
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