Process-induced positive charges in Hf-based gate stacks
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2826937
Reference33 articles.
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4. Electrical characteristics of metal-insulator-semiconductor structures with atomic layer deposited Al2O3, HfO2, and nanolaminates on different silicon substrates;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-01
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