Grain boundary mediated amorphization in silicon during ion irradiation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102637
Reference12 articles.
1. Thermodynamic Criteria for Grain-Boundary Melting: A Molecular-Dynamics Study
2. Heterophase dislocations — An approach towards interpreting high temperature grain boundary behavior
3. Amorphization of Silicon by Ion Irradiation: The Role of the Divacancy
4. Divacancy control of the balance between ion-beam-induced epitaxial cyrstallization and amorphization in silicon
5. Enhanced diffusion in Si and Ge by light ion implantation
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