Schottky barrier characteristics of Pt contacts to n-type InGaN
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2187274
Reference17 articles.
1. Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors
2. CW operation of short-channel GaN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz
3. High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN
4. Ohmic contacts and schottky barriers to n-GaN
5. Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN
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