Impact of film properties of atomic layer deposited HfO2 resulting from annealing with a TiN capping layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2357032
Reference19 articles.
1. M. Ritala and M. Leskela, inHandbook of Thin Films Materials, edited by H. S. Nalwa (Academic, San Diego, 2001), Vol. 1, p. 103.
2. Dielectric breakdown mechanisms in gate oxides
3. Robustness of ultrathin aluminum oxide dielectrics on Si(001)
4. Impact of Deposition and Annealing Temperature on Material and Electrical Characteristics of ALD HfO[sub 2]
5. Structure and stability of ultrathin zirconium oxide layers on Si(001)
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