Accurate determination of majority thermal-capture cross sections of deep impurities inp-njunctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354673
Reference14 articles.
1. Accurate determination of the free carrier capture kinetics of deep traps by space‐charge methods
2. Dynamics of capture from free‐carrier tails in depletion regions and its consequences in junction experiments
3. Evolution of electrical magnitudes in gradualp‐njunctions with deep levels during the emission of majority carriers
4. Photocapacitance Studies of the Oxygen Donor in GaP. II. Capture Cross Sections
5. Analysis of a reverse-biased linearly graded junction with high concentration of deep impurities
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1. Excess noise and deep levels in GaAs detectors of nuclear particles and ionizing radiation;Journal of Communications Technology and Electronics;2015-06
2. Dependence of Generation–Recombination Noise With Gate Voltage in FD SOI MOSFETs;IEEE Transactions on Electron Devices;2012-10
3. Effects of oxygen related defects on the electrical and thermal behavior of a n+−p junction;Journal of Applied Physics;2004-01-15
4. GaN deep-level capture barriers;Photodetectors: Materials and Devices VI;2001-06-12
5. Deep Centers and Their Capture Barriers in MOCVD-Grown GaN;MRS Proceedings;2001
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