The underlying micro-mechanism of performance enhancement of non-polar n-ZnO/p-AlGaN ultraviolet light emitting diode with i-ZnO inserted layer-Reference-Cited by-同舟云学术

The underlying micro-mechanism of performance enhancement of non-polar n-ZnO/p-AlGaN ultraviolet light emitting diode with i-ZnO inserted layer

Published:2018-01-15 Issue:3 Volume:112 Page:033505
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Jiang Fan¹,Chen Jingwen¹,Bi Han²,Li Luying¹,Jing Wenkui¹,Zhang Jun¹,Dai Jiangnan¹,Che Renchao²,Chen Changqing¹,Gao Yihua¹^ORCID

Affiliation:

1. Center for Nanoscale Characterization & Devices (CNCD), Wuhan National Laboratory for Optoelectronics (WNLO) and School of Physics, Huazhong University of Science and Technology (HUST), Luoyu Road 1037, Wuhan 430074, People's Republic of China

2. Laboratory of Advanced Materials, Department of Materials Science, Fudan University, Shanghai 200438, China

Funder

Key Project of Chinese National Development Programs

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5010594

Reference31 articles.

1. Ultraviolet random lasing from Mg0.12Zn0.88O:N/ZnO:Ga single-heterostructure diode

2. Electroluminescence from a n-ZnO nanorod/p-CuAlO2 heterojunction light-emitting diode

3. Ga-doped ZnO films grown on GaN templates by plasma-assisted molecular-beam epitaxy

4. Wide band gap ferromagnetic semiconductors and oxides

5. Fabrication of homostructural ZnO p–n junctions and ohmic contacts to arsenic-doped p-type ZnO

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