Physics of high‐intensity nanosecond electron source: Charge limit phenomenon in GaAs photocathodes-Reference-Cited by-同舟云学术

Physics of high‐intensity nanosecond electron source: Charge limit phenomenon in GaAs photocathodes

Published:1996-05-01 Issue:9 Volume:79 Page:7318-7323
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:

Author:

Herrera‐Gómez A.¹,Vergara G.²,Spicer W. E.²

Affiliation:

1. Stanford Electronic Laboratories, Stanford University, Stanford, California 94305‐4055 Stanford Linear Accelerator Center, Stanford, California 94309, and Laboratorio de Investigación en Materiales, CINVESTAVUAQ, Querétaro 76010, México

2. Stanford Electronic Laboratories, Stanford, California 94305‐4055 and Stanford Linear Accelerator Center, Stanford, California 94309

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference5 articles.

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2. R. Alley, H. Aoyagi, J. Clendenin, J. Frisch, C. Garden, E. Hoyt, R. Kirby, L. Klaisner, A. Kulikov, R. Miller, G. Mulhollan, C. Prescott, P. Saez, D. Schultz, H. Tang, J. Turner, K. Witte, M. Woods, A. D. Yeremian, and M. Zolotorev, SLAC-PUB-95–6489 (1995).

3. A. Herrera-Gomez and W. E. Spicer, SPIE Proceedings 2022, 51 (1993).PSISDG0277-786X

4. J. R. Lowney and H. S. Bennet, J. Appl. Phys. 69, 7102 (1991).JAPIAU0021-8979

5. E. H. Rhoderick and R. H. Williams, Metal-Semiconductors Contact (Clarendon, Oxford, 1988), Chaps. 1 and 3, and Appendix A.

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