Affiliation:
1. Research and Development Department, Photo Electron Soul Inc., C-TECs #208, Furo-cho, Chikusa-ku, Nagoya 464-8601, Japan
Abstract
The dependence of the electron emission current density on the excitation power density of a Cs/O-activated negative electron affinity (NEA) InGaN photocathode was investigated. The emission current density of the NEA-InGaN photocathode increased monotonically with the excitation power density in the measured range. The emission current density reached 5.6 × 103 A/cm2 at an excitation power density of 2.6 × 106 W/cm2. Using the electron thermal energy estimated by comparing simulation and experimental results [D. Sato, H. Shikano, A. Koizumi, T. Nishitani, Y. Honda, and H. Amano, J. Vac. Sci. Technol. B 39, 062209 (2021)], the reduced brightness of 4 × 108 A/m2 sr V was derived.
Funder
National Institute of Information and Communications Technology
Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials
Cited by
2 articles.
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