A technique for quantitative determination of the profile of the residual stress along the depth of p+ silicon films-Reference-Cited by-同舟云学术

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A technique for quantitative determination of the profile of the residual stress along the depth of p+ silicon films

Published:1995-08-14 Issue:7 Volume:67 Page:912-914
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yang E. H.,Yang S. S.,Yoo S. H.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.114692

Reference8 articles.

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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