Discussion of some “trap signatures” observed by admittance spectroscopy in CdTe thin-film solar cells-Reference-Cited by-同舟云学术

Discussion of some “trap signatures” observed by admittance spectroscopy in CdTe thin-film solar cells

Published:2010-09-15 Issue:6 Volume:108 Page:064501
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Li Jian V.,Johnston Steve W.,Li Xiaonan,Albin David S.,Gessert Timothy A.,Levi Dean H.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3475373

Reference24 articles.

1. B. E. McCandless and J. R. Sites, in Handbook of Photovoltaic Science and Engineering, edited by A. Luque and S. Hegedus (Wiley, West Sussex, England, 2003), p. 617.

2. Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe

3. Photo-induced current transient spectroscopic study of the traps in CdTe

4. Admittance spectroscopy of CdTe∕CdS solar cells subjected to varied nitric-phosphoric etching conditions

5. Simulated admittance spectroscopy measurements of high concentration deep level defects in CdTe thin-film solar cells

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