Impurity dependence on hydrogen and ammonia flow rates in InGaN bulk films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119775
Reference15 articles.
1. Effect of hydrogen on the indium incorporation in InGaN epitaxial films
2. Hydrogen passivation of Ca acceptors in GaN
3. Thin films and devices of diamond, silicon carbide and gallium nitride
4. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
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