Three dimensional finite element modeling and characterization of intermediate states in single active layer phase change memory devices-Reference-Cited by-同舟云学术

Three dimensional finite element modeling and characterization of intermediate states in single active layer phase change memory devices

Author:

Cinar I.¹²,Aslan O. B.¹³⁴^ORCID,Gokce A.¹,Dincer O.¹³^ORCID,Karakas V.¹,Stipe B.⁵,Katine J. A.⁵,Aktas G.¹,Ozatay O.¹

Affiliation:

1. Department of Physics, Bogazici University, Bebek, 34342 Istanbul, Turkey

2. Department of Physics, Karamanoglu Mehmetbey University, 70100 Karaman, Turkey

3. Department of Electrical and Electronic Engineering, Bogazici University, Bebek, 34342 Istanbul, Turkey

4. Department of Physics, Colombia University, New York, New York 10027, USA

5. HGST, A Western Digital Company, San Jose, California 95135, USA

Funder

Bogazici University Research Fund

European Union FP7 Marie Curie IRG

TUBITAK

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

Reference37 articles.

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