Predicting thin‐film stoichiometry in reactive sputtering
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.340030
Reference10 articles.
1. Mechanisms of reactive sputtering of indium III: A general phenomenological model for reactive sputtering
2. Influence of the nitrogen partial pressure on the properties of d.c.-sputtered titanium and titanium nitride films
3. Mechanism of rf reactive sputtering
4. Modeling of reactive sputtering of compound materials
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