Surface-interface exploration of Mg deposited on Si(100) and oxidation effect on interfacial layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4905592
Reference38 articles.
1. Scaling the gate dielectric: Materials, integration, and reliability
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1. Synthesis of crystalline Mg2Si films by ultrafast deposition of Mg on Si(111) and Si(001) at high temperatures. Mg/Si intermixing and reaction mechanisms;Materials Chemistry and Physics;2021-01
2. Study of the Very First Stages of Mg Growth onto Si(100);Defect and Diffusion Forum;2018-02
3. Growth, stability and decomposition of Mg2Si ultra-thin films on Si (100);Applied Surface Science;2018-01
4. MgO monolayer epitaxy on Ni (100);Applied Physics Letters;2017-11-20
5. A perfect wetting of Mg monolayer on Ag(111) under atomic scale investigation: First principles calculations, scanning tunneling microscopy, and Auger spectroscopy;The Journal of Chemical Physics;2016-05-21
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