Deposition and characterization of MgO/Si gate stacks grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Deposition and characterization of MgO/Si gate stacks grown by molecular beam epitaxy

Published:2012-05 Issue:14 Volume:520 Page:4508-4511
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Su Chen-Yi,Frederickx Michiel,Menghini Mariela,Dillemans Leander,Lieten Ruben,Smets Tomas,Seo Jin Won,Locquet Jean-Pierre

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. High-K dielectrics for the gate stack

2. Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions

3. Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers

4. Characterization of epitaxial MgO growth on Si(001) surface

5. Growth, ambient stability and electrical characterisation of MgO thin films on silicon surfaces

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Realizing improved performance of metal-insulator-semiconductor diodes with high-k MgO/SiOx stack;Journal of Alloys and Compounds;2023-10

2. Effects of oxygen contents on the physical properties of MgO films and carrier transport of Au/MgO/ZnO MIS diodes;Ceramics International;2023-09

3. Post-annealing treatment in improving high dielectric constant MgO-based metal-oxide-semiconductor diodes;Applied Physics Letters;2022-06-20

4. Study of the Very First Stages of Mg Growth onto Si(100);Defect and Diffusion Forum;2018-02

5. (Invited) Molecular Dynamics of Dipole Layer Formation at High-k/SiO2Interface;ECS Transactions;2017-08-16

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