Effect of overgrowth temperature on the mid-infrared response of Ge/Si(001) quantum dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3682304
Reference26 articles.
1. Normal-incidence infrared photoconductivity in Si p-i-n diode with embedded Ge self-assembled quantum dots
2. Intra-valence band photocurrent spectroscopy of self-assembled Ge dots in Si
3. Intraband absorption and photocurrent spectroscopy of self-assembled p-type Si/SiGe quantum dots
4. Intraband photoresponse of SiGe quantum dot/quantum well multilayers
5. Interlevel transitions and two-photon processes in Ge/Si quantum dot photocurrent
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