Heteroepitaxial growth of Ge on 〈111〉 Si by vacuum evaporation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93404
Reference13 articles.
1. Low energy electron loss spectroscopy of Si–Ge interfaces
2. Solid‐phase heteroepitaxy of Ge on 〈100〉Si
3. Epitaxial growth of Ge on 〈100〉 Si by a simple chemical vapor deposition technique
4. Epitaxial growth behavior of Ge on Si {111} surfaces
5. Epitaxial growth behavior of Ge on Si {111} surfaces
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1. Structural changes due to reannealing of Ge thin films prepared by solid phase epitaxial growth on Si (111) surface;Thin Solid Films;2020-09
2. Surface morphology and structure of Ge layer on Si(111) after solid phase epitaxy;Surface Science;2018-05
3. In situ observation of low temperature growth of Ge on Si(1 1 1) by reflection high energy electron diffraction;Applied Surface Science;2016-05
4. Heteroepitaxial Ge-on-Si by DC magnetron sputtering;AIP Advances;2013-07
5. Effects of temperature and near-substrate plasma density on the structural and electrical properties of dc sputtered germanium thin films;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2011-09
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