Infrared absorption from OH− ions adjacent to lithium acceptors in hydrothermally grown ZnO-Reference-Cited by-同舟云学术

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Infrared absorption from OH− ions adjacent to lithium acceptors in hydrothermally grown ZnO

Published:2004-12-15 Issue:12 Volume:96 Page:7168-7172
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Halliburton L. E.,Wang Lijun,Bai Lihua,Garces N. Y.,Giles N. C.,Callahan M. J.,Wang Buguo

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1806531

Reference48 articles.

1. Hydrogen as a Cause of Doping in Zinc Oxide

2. Defect analysis and engineering in ZnO

3. Strategies for Controlling the Conductivity of Wide-Band-Gap Semiconductors

4. Hydrogen as a shallow center in semiconductors and oxides

5. Hydrogen: A Relevant Shallow Donor in Zinc Oxide

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