Selective nucleation and growth of carbon nanotubes at the CoSi2/Si interface-Reference-Cited by-同舟云学术

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Selective nucleation and growth of carbon nanotubes at the CoSi2/Si interface

Published:2000-02-07 Issue:6 Volume:76 Page:706-708
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Biró L. P.,Molnár G.,Szabó I.,Vértesy Z.,Horváth Z. E.,Gyulai J.,Kónya Z.,Piedigrosso P.,Fonseca A.,Nagy J. B.,Thiry P. A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.125868

Reference24 articles.

1. Helical microtubules of graphitic carbon

2. Electronic structure of atomically resolved carbon nanotubes

3. Atomic structure and electronic properties of single-walled carbon nanotubes

4. Room-temperature transistor based on a single carbon nanotube

5. Single- and multi-wall carbon nanotube field-effect transistors

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Selective Growth of Single‐walled Carbon Nanotubes using Cobalt Disilicide;ChemNanoMat;2022-02-10

2. Thermal stability of catalytically grown multi-walled carbon nanotubes observed in transmission electron microscopy;Applied Physics A;2008-07-04

3. Growth of self-aligned carbon nanotube for use as a field-effect transistor using cobalt silicide as a catalyst;Carbon;2007-07

4. Growth behavior and interfacial reaction between carbon nanotubes and Si substrate;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2004-07

5. Growth of Multiwall Carbon Nanotubes on Nickel-silicide Layers by Using Plasma-enhanced Chemical Vapor Deposition (P-CVD);Hyomen Kagaku;2004

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