Study of ferroelectric-thin-film thickness effects on metal-ferroelectric-SiO2–Si transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1470249
Reference18 articles.
1. Characterization of metalorganic decomposition-derived SrBi2Ta2O9 thin films with different thicknesses
2. A comparative study on the electrical conduction mechanisms of (Ba0.5Sr0.5)TiO3 thin films on Pt and IrO2 electrodes
3. Pulsed laser ablation synthesis and characterization of layered Pt/SrBi2Ta2O9/Pt ferroelectric capacitors with practically no polarization fatigue
4. Time dependent dielectric breakdown of paraelectric barium-strontium-titanate thin film capacitors for memory device applications
5. Electrical Properties of FerroelectricBaMgF4Films on Si Substrates
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1. Properties of ferroelectric Pb(Zr,Ti)O3 thin films on ZnO/Al2O3 (0001) epilayers;Thin Solid Films;2005-11
2. Polar Heterostructure for Multifunction Devices: Theoretical Studies;IEEE Transactions on Electron Devices;2005-02
3. Metal piezoelectric semiconductor field effect transistors for piezoelectric strain sensors;Applied Physics Letters;2004-08-16
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