Characterization of metalorganic decomposition-derived SrBi2Ta2O9 thin films with different thicknesses
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.372094
Reference24 articles.
1. Ferroelectric Memories
2. Active ancestral molecules
3. Electrical properties of SrBi2Ta2O9 thin films and their temperature dependence for ferroelectric nonvolatile memory applications
4. Ferroelectric non-volatile memories for low-voltage, low-power applications
5. Temperature effects on charge retention characteristics of integrated SrBi2(Ta,Nb)2O9 capacitors
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3. Thickness-dependent ferroelectric behavior of predominantly (117)-oriented Bi3.15Nd0.85Ti3O12 thin-film capacitors;Applied Physics Letters;2015-04-27
4. Bi2SiO5 Doping Concentration Effects on the Electrical Properties of SrBi2Ta2O9 Films;Journal of Electronic Materials;2014-06-14
5. Impact of forming gas annealing on the dielectric properties of SrBi2Ta2O9 thin films prepared by metalorganic decomposition;Journal of Applied Physics;2012-10-15
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