Traveling-wave photomixers fabricated on high energy nitrogen-ion-implanted GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2337523
Reference17 articles.
1. Coherent millimeter‐wave generation by heterodyne conversion in low‐temperature‐grown GaAs photoconductors
2. Terahertz frequency difference from vertically integrated low-temperature-grown GaAs photodetector
3. Pulsed photoconductive antenna terahertz sources made on ion-implanted GaAs substrates
4. Non-stoichiometric semiconductor materials for terahertz optoelectronics applications
5. Ultrabroadband terahertz field detection by photoconductive antennas based on multi-energy arsenic-ion-implanted GaAs and semi-insulating GaAs
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3. Photomixing THz Generation from Nitrogen-Ion–Implanted GaAs Metal-Semiconductor-Metal Diodes Enhanced by a Bragg Mirror;2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz);2020-11-08
4. Arsenides-and related III-V materials-based multilayered structures for terahertz applications: Various designs and growth technology;Progress in Crystal Growth and Characterization of Materials;2020-05
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