Lattice parameters and Raman-active phonon modes of β-(AlxGa1−x)2O3
Author:
Affiliation:
1. Institut für Experimentelle Physik II, Universität Leipzig, Halbleiterphysik, Linnéstr. 5, 04103 Leipzig, Germany
Funder
Europäischer Fonds für Regionale Entwicklung
European Social Fund and Free State of Saxony
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4915627
Reference18 articles.
1. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
2. Vertical Solar-Blind Deep-Ultraviolet Schottky Photodetectors Based on β-Ga2O3Substrates
3. Ga2O3Thin Film Growth onc-Plane Sapphire Substrates by Molecular Beam Epitaxy for Deep-Ultraviolet Photodetectors
4. Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors
5. Structural and optical properties of (In,Ga)2O3 thin films and characteristics of Schottky contacts thereon
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