Raman tensor determination of transparent uniaxial crystals and their thin films—a-plane GaN as exemplary case-Reference-Cited by-同舟云学术

Raman tensor determination of transparent uniaxial crystals and their thin films—a-plane GaN as exemplary case

Published:2021-09-20 Issue:12 Volume:119 Page:121109
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hildebrandt R.¹^ORCID,Sturm C.¹^ORCID,Wieneke M.²^ORCID,Dadgar A.²^ORCID,Grundmann M.¹^ORCID

Affiliation:

1. Universität Leipzig, Felix Bloch Institute for Solid State Physics, Semiconductor Physics Group, Linnéstraße 5, 04103 Leipzig, Saxony, Germany

2. Otto-von-Guericke-Universität Magdeburg, Institute for Physics, Abteilung Halbleiterepitaxie, Universitätsplatz 2, 39106 Magdeburg, Saxony-Anhalt, Germany

Funder

Deutsche Forschungsgemeinschaft

European Regional Development Fund

Universität Leipzig

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0060198

Reference40 articles.

1. Localized vibrational modes in GaN:O tracing the formation of oxygenDX-like centers under hydrostatic pressure

2. J. R. Ferraro , K. Nakamoto , and C. W. Brown , in Introductory Raman Spectroscopy, 2nd ed., edited by J. R. Ferraro , K. Nakamoto , and C. W. Brown ( Academic Press, San Diego, 2003), pp. 207–266.

3. Dopant mapping in highly p-doped silicon by micro-Raman spectroscopy at various injection levels

4. Multiphonon resonant Raman scattering in non-polar GaN epilayers

5. Determination of the thickness and orientation of few-layer tungsten ditelluride using polarized Raman spectroscopy

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