Effects of radio‐frequency bias on GaAs surfaces etched by Ar‐electron‐cyclotron‐resonance plasma
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345489
Reference21 articles.
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1. Microwave discharges at low pressures and peculiarities of the processes in strongly non-uniform plasma;Plasma Sources Science and Technology;2015-08-20
2. Dry Etching of InP Vias;Handbook of Advanced Plasma Processing Techniques;2000
3. Dependence of contact resistivity and Schottky diode characteristics on dry etching induced damage of GaInAs;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1994-09
4. In situ electron cyclotron resonance plasma surface cleaning of silicon;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1994-07
5. Chemical etching of GaAs with a novel low energy ion beam source : A low damage process for device fabrication;Vacuum;1993-03
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