GaAs Radical Etching with a Cl2Plasma in a Reactive Ion Beam Etching System-Reference-Cited by-同舟云学术

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GaAs Radical Etching with a Cl2Plasma in a Reactive Ion Beam Etching System

Published:1984-08-20 Issue:Part 2, No. 8 Volume:23 Page:L564-L566
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sugata Sumio,Asakawa Kiyoshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Progress and perspectives in dry processes for leading-edge manufacturing of devices: toward intelligent processes and virtual product development;Japanese Journal of Applied Physics;2019-05-30

2. Photo-Atomic Layer Etching of GaAs/AlGaAs Nanoheterostructures;ACS Applied Materials & Interfaces;2019-04-23

3. Ion Beam Etching of Compound Semiconductors;Handbook of Advanced Plasma Processing Techniques;2000

4. Microwave plasmas for low-temperature dry sterilization;Biomaterials;1996-07

5. Controlled beam dry etching of InP by using Br2-N2 Gas;Journal of Electronic Materials;1996-05

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