High temperature characteristics of amorphous TiWSixnonalloyed ohmic contacts to GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.352064
Reference11 articles.
1. A review of the theory and technology for ohmic contacts to group III–V compound semiconductors
2. An improved AuGe ohmic contact to n-GaAs
3. Ohmic contacts to n‐GaAs using graded band gap layers of Ga1−xInxAs grown by molecular beam epitaxy
4. Thermal stability of tungsten ohmic contacts to the graded‐gap InGaAs/GaAs/AlGaAs heterostructure
5. Thermally stable ohmic contacts ton‐type GaAs. III. GeInW and NiInW contact metals
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Non-alloyed ohmic contacts using MOCVD grown n+-InxGa1−xAs on n-GaAs;Materials Science and Engineering: B;1999-12
2. Planar multibarrier 80/240-GHz heterostructure barrier varactor triplers;IEEE Transactions on Microwave Theory and Techniques;1997-04
3. All-refractory GaAs FET using amorphous TiWSi/sub x/ source/drain metallization and graded-In/sub x/Ga/sub 1/spl minus/x/As layers;IEEE Electron Device Letters;1994-01
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