Effect of inductively coupled plasma and plasma parameters on magnetron sputtered Al-Doped ZnO highly conductive thin films at low-temperature-Reference-Cited by-同舟云学术

Effect of inductively coupled plasma and plasma parameters on magnetron sputtered Al-Doped ZnO highly conductive thin films at low-temperature

Published:2018-05-28 Issue:20 Volume:123 Page:205107
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Sahu Bibhuti Bhusan¹,Jin Su Bong¹,Xiang Piao Jin¹,Kim Jay Bum¹,Han Jeon Geon¹

Affiliation:

1. NU-SKKU Joint Institute for Plasma Nano Materials (IPNM), Center for Advanced Plasma Surface Technology, Department of advanced materials science and engineering, Sungkyunkwan University, Suwon 440-746, South Korea

Funder

Ministry of Science, ICT and Future Planning

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5022708

Reference67 articles.

1. Transparent conducting oxide semiconductors for transparent electrodes

2. Al in ZnO — From doping to alloying: An investigation of Al electrical activation in relation to structure and charge transport limits

3. Nondestructive Raman Scattering Assessment of Solution-Processed ZnO-Doped Layers for Photovoltaic Applications

4. Improvement of organic solar cell performances using a zinc oxide anode coated by an ultrathin metallic layer

5. Enhanced Performance in Al-Doped ZnO Based Transparent Flexible Transparent Thin-Film Transistors Due to Oxygen Vacancy in ZnO Film with Zn–Al–O Interfaces Fabricated by Atomic Layer Deposition

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