Stoichiometry‐dependent native acceptor and donor levels in Ga‐rich‐n‐type gallium arsenide
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350953
Reference19 articles.
1. Defects due to nonstoichiometric growth in semi‐insulating GaAs and their effects on Si implantation activation efficiency
2. Stoichiometric structures of defects in high‐purity GaAs grown by the liquid encapsulated Czochralski method
3. Stoichiometry‐dependent deep levels inn‐type GaAs
4. Stoichiometry‐controlled compensation in liquid encapsulated Czochralski GaAs
5. Hole traps in bulk and epitaxial GaAs crystals
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