Defects due to nonstoichiometric growth in semi‐insulating GaAs and their effects on Si implantation activation efficiency
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343693
Reference15 articles.
1. Effect of crystal stoichiometry on activation efficiency in Si implanted, rapid thermal annealed GaAs
2. Stoichiometry dependence of electrical activation efficiency in Si implanted layers of undoped, semi‐insulating GaAs
3. Deep Levels in Semi‐Insulating LEC GaAs Before and After Silicon Implantation
4. Annealing behavior of implanted Si in semi‐insulating GaAs in the presence of stress
5. The Role of Gallium Antisite Defect in Activation and Type-Conversion in Si Implanted GaAs
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Complete set of deep traps in semi-insulating GaAs;Journal of Applied Physics;2000
2. Participation ofEL2 in the donor activation of silicon implanted into GaAs;Physical Review B;1994-06-15
3. Stoichiometry‐dependent native acceptor and donor levels in Ga‐rich‐n‐type gallium arsenide;Journal of Applied Physics;1992-04
4. Influence of melt stoichiometry on deep hole traps in n-type LEC Gallium Arsenide;Non-Stoichiometry in Semiconductors;1992
5. Analysis of Annealing Effect on the Threshold Voltage Uniformity of GaAs Field Effect Transistors;Journal of The Electrochemical Society;1991-09-01
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