Insituellipsometry comparison of the nucleation and growth of sputtered and glow‐dischargea‐Si:H
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339132
Reference27 articles.
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1. Is the nucleation and coalescence behavior in the growth of a-Si:H films prepared by the CAT-CVD different?;Thin Solid Films;2001-09
2. Model of the RHEED intensity oscillations based on reflectivity of the MBE grown surface;Vacuum;1998-04
3. Observation of Ellipsometric Oscillations when Depositing $\bf SiO_{\ninmbi{x}}$ Film on Si(100) Substrate Using an Electron Beam Deposition Method;Japanese Journal of Applied Physics;1997-06-15
4. In situ Ellipsometric Studies of the growth of a-Si:H films Prepared by the Hot wire Deposition;MRS Proceedings;1996
5. Characterization Techniques;Molecular Beam Epitaxy;1996
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