Model of the RHEED intensity oscillations based on reflectivity of the MBE grown surface
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference23 articles.
1. Dynamics of film growth of GaAs by MBE from Rheed observations
2. Molecular Beam Epitaxy;Herman,1996
3. RHEED and Reflection Electron Imaging of Surfaces,1988
4. Photoelectron spectroscopy of solids and their surfaces
5. Insituellipsometry comparison of the nucleation and growth of sputtered and glow‐dischargea‐Si:H
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1. Growth studies of heteroepitaxial oxide thin films using reflection high-energy electron diffraction;Epitaxial Growth of Complex Metal Oxides;2022
2. Some geometrical aspects of diffracted waves formation on a reconstructed crystal face at RHEED;Surface Science;2018-11
3. Reflection high-energy electron diffraction (RHEED) for in situ characterization of thin film growth;In Situ Characterization of Thin Film Growth;2011
4. A study of the kinetic rate equation model for simulations of molecular beam epitaxy crystal growth: temperature dependence of surface kinetic processes;Semiconductor Science and Technology;1998-11-01
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