The steady-state and transient electron transport within bulk zinc-blende indium nitride: The impact of crystal temperature and doping concentration variations-Reference-Cited by-同舟云学术

The steady-state and transient electron transport within bulk zinc-blende indium nitride: The impact of crystal temperature and doping concentration variations

Published:2016-03-07 Issue:9 Volume:119 Page:095104
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Siddiqua Poppy¹,O'Leary Stephen K.¹

Affiliation:

1. School of Engineering, The University of British Columbia, 3333 University Way, Kelowna, British Columbia V1V 1V7, Canada

Funder

Natural Sciences and Engineering Research Council of Canada (NSERC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4942831

Reference42 articles.

1. Unusual properties of the fundamental band gap of InN

2. When group-III nitrides go infrared: New properties and perspectives

3. Longitudinal polar optical phonons in InN/GaN single and double het- erostructures

4. Electron cyclotron effective mass in indium nitride

5. High-field transport in wide-band-gap semiconductors

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