Hole mobility of p-type β‐FeSi2 thin films grown from Si∕Fe multilayers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1891279
Reference23 articles.
1. A clarification of the index of refraction of beta‐iron disilicide
2. A silicon/iron-disilicide light-emitting diode operating at a wavelength of 1.5 μm
3. Room Temperature 1.6 µm Electroluminescence from a Si-Based Light Emitting Diode with β-FeSi2 Active Region
4. Control of the Conduction Type of Nondoped High Mobility β-FeSi2 Films Grown from Si/Fe Multilayers by Change of Si/Fe Ratios
5. Improvement of the Electrical Properties of β-FeSi 2 Films on Si (001) by High-Temperature Annealing
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1. A simple chemical reduction approach to dope β-FeSi2 with boron and its comprehensive characterization;RSC Advances;2023
2. Effect of post-annealing on the significant photoresponsivity enhancement of BaSi2 epitaxial films on Si(111);Applied Physics Express;2021-01-27
3. Multi-band analyses of the conductivity, the Hall coefficient, and the Seebeck coefficient of single crystal p-type β-FeSi2;Journal of Alloys and Compounds;2020-12
4. Observation of room-temperature superparamagnetic behavior of Fe5Si3 nanocrystals synthesized via 50 keV Fe ion implantation in silicon;Applied Physics A;2020-02-26
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