AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with ZnO gate layer and (NH4)2Sx surface treatment
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3467056
Reference17 articles.
1. On the temperature and carrier density dependence of electron saturation velocity in an AlGaN/GaN HEMT
2. MOCVD-Grown AlGaN Buffer GaN HEMTs With V-Gates for Microwave Power Applications
3. Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors
4. Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors
5. AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistors Using Oxide Insulator Grown by Photoelectrochemical Oxidation Method
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