T-ZnO/AlGaN/GaN HEMT Uric Acid Sensor-Sensitivity Analysis and Effect of Surface Wettability for Improved Performance
Author:
Affiliation:
1. Modeling and Simulation Research Laboratory Shaheed Rajguru College of Applied Sciences for Women, University of Delhi, New Delhi, India
Funder
Department of Science and Technology [Science and Engineering Research Board (SERB)-DST], Government of India
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Instrumentation
Link
http://xplorestaging.ieee.org/ielx7/7361/9795939/09768808.pdf?arnumber=9768808
Reference35 articles.
1. Bias dependent microwave performance of AlGaN/GaN MODFET's up to 100 V
2. 2-D Analytical Model for Current–Voltage Characteristics and Transconductance of AlGaN/GaN MODFETs
3. Analytical Modeling and Simulation of AlGaN/GaN MOS-HEMT for High Sensitive pH Sensor
4. Modeling and Simulation of AlGaN/GaN MOS-HEMT for Biosensor Applications
5. Label free detection of uric acid using Si nanowire PH sensor
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1. Performance Assessment of AlGaN/GaN HEMT for Human Serum Albumin Detection Using Charge Deduction Methodology;IEEE Sensors Journal;2024-05-15
2. Development of AlGaN/GaN MOSHEMT biosensors: State-of-the-art review and future directions;Materials Science in Semiconductor Processing;2024-05
3. A comprehensive simulation study on dual segment AlGaN/GaN HEMT for mercury ion detection: Addressing steric hindrance and interfering ions;Materials Science and Engineering: B;2024-03
4. A Potentiometric Uric Acid Biosensor Integrated With Temperature Correction Readout Circuit on Flexible PCB;IEEE Sensors Journal;2023-05-01
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