Concentration and penetration depth of H introduced into crystalline Si by hydrogenation methods used to fabricate solar cells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2363684
Reference58 articles.
1. Improvement of polycrystalline silicon solar cells with grain‐boundary hydrogenation techniques
2. Hydrogen passivation of defects in silicon ribbon grown by the edge‐defined film‐fed growth process
3. Hydrogen in silicon: A discussion of diffusion and passivation mechanisms
4. Plasma Si nitride—A promising dielectric to achieve high‐quality silicon MIS/IL solar cells
5. Overview on SiN surface passivation of crystalline silicon solar cells
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