GaNAs resonant-cavity avalanche photodiode operating at 1.064 μm
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1308272
Reference9 articles.
1. Comparison measurements for selection of suitable photodetectors for use in Nd: YAG LDA systems
2. Quantum-dot resonant-cavity separate absorption, charge, and multiplication avalanche photodiode operating at 1.06 μm
3. Effect of growth temperature on photoluminescence of GaNAs/GaAs quantum well structures
4. GaNAs grown by gas source molecular beam epitaxy
5. A Study of Mixed Group-V Nitrides Grown by Gas-Source Molecular Beam Epitaxy Using a Nitrogen Radical Beam Source
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1. Theoretical calculations of absorption spectra of GaNAsBi-based MQWs operating at 1.55 μm;Journal of Alloys and Compounds;2015-10
2. First principles study of structural, electronic and optical properties of indium gallium nitride arsenide lattice matched to gallium arsenide;Materials Science in Semiconductor Processing;2015-02
3. Self-consistent analysis of the band structure of doped lattice-matched GaNAsBi-based QWs operating at 1.55μm;Materials Science in Semiconductor Processing;2014-12
4. Photoconductivity and photoluminescence under bias in GaInNAs/GaAs MQW p-i-n structures;Nanoscale Research Letters;2012-09-28
5. Evidence of valence band perturbations in GaAsN/GaAs(001): Combined variable-angle spectroscopic ellipsometry and modulated photoreflectance investigation;Physical Review B;2009-08-25
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