Characterization of InGaN thin films using high-resolution x-ray diffraction
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125822
Reference10 articles.
1. Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime
2. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
3. Characteristics of InGaN/AlGaN light-emitting diodes on sapphire substrates
4. Compositional inhomogeneity and immiscibility of a GaInN ternary alloy
5. Characterization of InGaN multiquantum well structures for blue semiconductor laser diodes
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