Dissociation and pyrolysis of Si2H6 on Si surfaces: The influence of surface structure and adlayer composition
Author:
Publisher
AIP Publishing
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.469739
Reference63 articles.
1. Silicon chemical vapor deposition one step at a time: fundamental studies of silicon hydride chemistry
2. Selective growth condition in disilane gas source silicon molecular beam epitaxy
3. Limiting conditions of Si selective epitaxial growth in Si2H6gas‐source molecular beam epitaxy
4. Gas source molecular‐beam epitaxy of Si and SiGe using Si2H6and GeH4
5. Insituobservation of growth rate enhancement during gas source molecular beam epitaxy of Si1−xGexalloys on Si(100) surfaces
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2. Theoretical Analysis of Si2H6 Adsorption on Hydrogenated Silicon Surfaces for Fast Deposition Using Intermediate Pressure SiH4 Capacitively Coupled Plasma;Coatings;2021-08-29
3. Analysis of surface adsorption kinetics of SiH4 and Si2H6 for deposition of a hydrogenated silicon thin film using intermediate pressure SiH4 plasmas;Applied Surface Science;2019-12
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5. Kinetics of the decomposition of disilane on a silicon growth surface into two non-identical radicals;Russian Journal of Physical Chemistry B;2016-03
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