Voltage-programmable negative differential resistance in memristor of single-crystalline lithium niobate thin film-Reference-Cited by-同舟云学术

Voltage-programmable negative differential resistance in memristor of single-crystalline lithium niobate thin film

Published:2022-01-17 Issue:3 Volume:120 Page:032901
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang Jiejun¹²,Pan Xinqiang¹²^ORCID,Luo Wenbo¹²^ORCID,Shuai Yao¹²^ORCID,Zeng Huizhong¹²,Xie Qin¹²,Huang Shitian¹²,Wu Chuangui¹²,Zhang Wanli¹²

Affiliation:

1. School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China

2. State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0070132

Reference37 articles.

1. New Phenomenon in Narrow Germaniump−nJunctions

2. A resistive switching memory device with a negative differential resistance at room temperature

3. Physical origins of current and temperature controlled negative differential resistances in NbO2

4. Negative differential resistance behavior in a single-crystalline vanadium dioxide nanobeam without epitaxial interfacial strain

5. Bipolar resistive switching with negative differential resistance effect in a Cu/BaTiO3/Ag device

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