Author:
Wong L. H.,Liu J. P.,Ferraris C.,Wong C. C.,Jonatan M. C.,White T. J.,Chan L.
Subject
Physics and Astronomy (miscellaneous)
Reference11 articles.
1. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
2. J. I. Pankove and T. D. Moustakas, Gallium Nitride (GaN) I (Academic, San Diego, 1998), p. 184.
3. R. Hull and J. C. Bean, Germanium Silicon: Physics and Materials (Academic, San Diego, 1999), p. 149.
4. Interaction between surface morphology and misfit dislocations as strain relaxation modes in lattice-mismatched heteroepitaxy
5. Artificial GeSi substrates for heteroepitaxy: Achievements and problems
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