Super critical thickness SiGe-channel heterostructure p-type metal-oxide-semiconductor field-effect transistors using laser spike annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2903849
Reference13 articles.
1. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
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1. Ultrathin SiGe Shell Channel p-Type FinFET on Bulk Si for Sub-10-nm Technology Nodes;IEEE Transactions on Electron Devices;2018-04
2. Effects of trap-assisted tunneling on gate-induced drain leakage in silicon–germanium channel p-type FET for scaled supply voltages;Japanese Journal of Applied Physics;2016-03-02
3. Future of Nanoscale Strained Si/SixGe1–x Metal-Oxide Semiconductor Field-Effect Transistor for Performance Metric Evaluation: A Review;Journal of Nanoelectronics and Optoelectronics;2014-06-01
4. Millisecond Annealing for Semiconductor Device Applications;Subsecond Annealing of Advanced Materials;2014
5. The Strained-SiGe Relaxation Induced Underlying Si Defects Following the Millisecond Annealing for the 32 nm PMOSFETs;Journal of The Electrochemical Society;2012
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