Burn-in effect on GaInP heterojunction bipolar transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1619216
Reference8 articles.
1. Near-ideal I-V characteristics of GaInP/GaAs heterojunction bipolar transistors
2. Extrinsic Base Surface Recombination Current in GaInP/GaAs Heterojunction Bipolar Transistors with Near-Unity Ideality Factor
3. Reliability investigation of InGaP/GaAs heterojunction bipolar transistors
4. Influence of surface recombination on the burn-in effect in microwave GaInP/GaAs HBT's
5. Acceptor reactivation kinetics in heavily carbon-doped GaAs epitaxial layers
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1. Burn-in effect in InGaP/GaAs HBT with intrinsically or extrinsically carbon doped base layer;Physica Scripta;2023-05-04
2. Temperature Dependence of Current-Voltage Characteristics of Au∕Ga[sub 0.51]In[sub 0.49]P Schottky Barrier Diodes;AIP Conference Proceedings;2011
3. On the energy band structure of the GaInP/GaAs heterojunction bipolar transistor;physica status solidi (c);2007-04
4. Role of Annealing in Constant Period of Voltage Stress on the Burn-in Effect Suppression of InGaP/GaAs Heterojunction Bipolar Transistors;Japanese Journal of Applied Physics;2007-03-08
5. Correlation between the base–emitter interface crystalline quality and the current gain in InGaP/GaAs HBTs grown by MOVPE;Journal of Crystal Growth;2007-01
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